Volume 25, Issue 26 p. 3578-3582
Communication

Highly Conductive SrVO3 as a Bottom Electrode for Functional Perovskite Oxides

Jarrett A. Moyer,

Department of Physics, Pennsylvania State University, University Park, PA 16802, USA

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Craig Eaton,

Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

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Roman Engel-Herbert,

Corresponding Author

Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

Department of Materials Science and Engineering and Materials Research Institute, Pennsylvania State University, University Park, PA 16802, USA.Search for more papers by this author
First published: 24 May 2013
Citations: 83

Abstract

Stoichiometric SrVO3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO3, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.

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