Volume 200, Issue 1 p. 143-146
Original Paper

Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers

U. T. Schwarz,

Corresponding Author

Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany

Phone: +49 941 943 2113, Fax: +49 941 943 2754Search for more papers by this author
E. Sturm ,

Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany

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W. Wegscheider,

Angewandte und Experimentelle Physik, Universität Regensburg, 93040 Regensburg, Germany

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V. Kümmler,

OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany

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A. Lell,

OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany

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V. Härle,

OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany

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First published: 15 October 2003
Citations: 19

Abstract

Adapting the Hakki–Paoli method for blue laser diodes we measure gain spectra for (In/Al)GaN on SiC substrate laser diodes in the low carrier density regime. From the measured longitudinal mode spacing we calculate the effective refractive index and can exclude a mode spacing ‘anomaly’. We demonstrate that the substrate has a considerable influence on the modal gain. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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