Volume 207, Issue 6 p. 1328-1331
Original Paper

Waveguide design of green InGaN laser diodes

Teresa Lermer,

Corresponding Author

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

University of Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany

Phone: +49 941 850 2002, Fax: +49 941 850 444 5641Search for more papers by this author
Marc Schillgalies,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Andreas Breidenassel,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Désirée Queren,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Christoph Eichler,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Adrian Avramescu,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Jens Müller,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Wolfgang Scheibenzuber,

University of Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany

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Ulrich Schwarz,

University of Regensburg, Universitätsstr. 31, 93053 Regensburg, Germany

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Stephan Lutgen,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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Uwe Strauss,

OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg, Germany

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First published: 14 June 2010
Citations: 40

Abstract

In this paper we investigate the waveguiding (WG) of direct green InGaN laser diodes grown on c-plane GaN substrates. The problem of parasitic modes emerges due to the reduced refractive index difference between the GaN waveguide and AlGaN cladding layers for green compared to blue emitting laser diodes. We discuss several approaches to avoid substrate modes. We investigate different materials and designs for optimized WG of green InGaN laser diodes using a 1D transfer matrix simulation tool.

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