Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures

Abstract

We study the lateral diffusion of photogenerated carriers within InGaN/GaN quantum wells by scanning in the focal plane of our confocal microscope. The photoluminescence (PL) images are analyzed at varying excitation densities in the temperature range between 4 K and room temperature. The results of a blue and a green emitting sample are discussed in context of reported diffusion lengths for InGaN/GaN quantum wells. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)