Volume 7, Issue 7-8 p. 1925-1927
Contributed Article

Optical anisotropy in semipolar (Al,In)GaN laser waveguides

W. Scheibenzuber, U. Schwarz,

Institute for Experimental and Applied Physics, University of Regensburg, Universitätsstraße 31, 93040 Regensburg, Germany

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R. Veprek,

Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland

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B. Witzigmann,

Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, 8092 Zurich, Switzerland

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A. Hangleiter,

Institute of Applied Physics, University of Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig, Germany

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First published: 20 July 2010
Citations: 4

Abstract

In this work, the optical eigenmodes of a semipolar (Al,In)GaN laser diode are calculated. A full vectorial one-dimensional 4×4 transfer matrix method is used to correctly incorporate the influence of birefringence of the wurtzite crystal. Depending on the orientation of the laser waveguide relative to the c-axis, the eigenmodes show TE/TM- or extraordinary/ordinary polarization. The polarization direction of the eigenmodes is crucial for the performance of the laser, as it determines the relevant interband matrix elements for the optical gain. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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