Volume 9, Issue 3-4 p. 700-703
ICNS-9 – Contributed Article

Spectral properties of polarized light from semipolar grown InGaN quantum wells at low temperatures

L. Schade,

Corresponding Author

Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany

Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany

Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, GermanySearch for more papers by this author
U. T. Schwarz,

Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany

Department of Microsystems Engineering (IMTEK), University of Freiburg, Germany

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T. Wernicke,

Institute of Solid State Physics, TU Berlin, Germany

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S. Ploch,

Institute of Solid State Physics, TU Berlin, Germany

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M. Weyers,

Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany

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M. Kneissl,

Institute of Solid State Physics, TU Berlin, Germany

Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Berlin, Germany

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First published: 29 November 2011
Citations: 2

Abstract

The polarization dependent photoluminescence at low temperatures of strained semipolar and nonpolar InGaN quantum wells was studied as a function of the emission wavelength. We found for semipolar QWs that the maximum of the spectral resolved optical polarization is either red- or blue-shifted with respect to the maximum of the emission.

In contrast, the nonpolar emission exhibits no clear maximum. We assign all effects to an inhomogeneous broad- ening of the emission caused by indium fluctuations and explain this behavior here in the light of the optical polarization switching. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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