Volume 11, Issue 2 p. 208-213
Communication

Floating Gate Memory-based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics

Jingli Wang,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Xuming Zou,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Xiangheng Xiao,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Lei Xu,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Chunlan Wang,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Changzhong Jiang,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Johnny C. Ho,

Corresponding Author

Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China

E-mail: johnnyho@cityu.edu.hk, liaolei@whu.edu.cnSearch for more papers by this author
Ti Wang,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Jinchai Li,

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

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Lei Liao,

Corresponding Author

Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072 China

E-mail: johnnyho@cityu.edu.hk, liaolei@whu.edu.cnSearch for more papers by this author
First published: 13 August 2014
Citations: 84

Abstract

Charge trapping layers are formed from different metallic nanocrystals in MoS2-based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 105 and a long retention time of 10 years.

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