Floating Gate Memory-based Monolayer MoS2 Transistor with Metal Nanocrystals Embedded in the Gate Dielectrics
Abstract
Charge trapping layers are formed from different metallic nanocrystals in MoS2-based nanocrystal floating gate memory cells in a process compatible with existing fabrication technologies. The memory cells with Au nanocrystals exhibit impressive performance with a large memory window of 10 V, a high program/erase ratio of approximately 105 and a long retention time of 10 years.





