Direct Observation of Hole Accumulation in Polymer Solar Cells During Device Operation using Light‐Induced Electron Spin Resonance

Tatsuya Nagamori

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan

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Kazuhiro Marumoto

Corresponding Author

marumoto@ims.tsukuba.ac.jp

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan

Japan Science and Technology Agency (JST), PRESTO, Kawaguchi, Saitama 322‐0012, Japan

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan.Search for more papers by this author

Tatsuya Nagamori

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan

Search for more papers by this author

Kazuhiro Marumoto

Corresponding Author

marumoto@ims.tsukuba.ac.jp

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan

Japan Science and Technology Agency (JST), PRESTO, Kawaguchi, Saitama 322‐0012, Japan

Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305‐8573, Japan.Search for more papers by this author

First published: 27 February 2013

https://doi.org/10.1002/adma.201204015

Citations: 39

Abstract

A clear correlation between the number of accumulated holes (N_spin) in poly(3‐hexylthiophene) (P3HT) and the deterioration of the performance is observed in polymer solar cells under simulated solar irradiation. The sites of hole accumulation with deep trapping levels are formed at the interfaces between P3HT:[6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) and poly(3,4‐ethylenedioxythiophene):poly(4‐styrenesulfonate) (PEDOT:PSS) layers.