Volume 27, Issue 28
Communication

Direct Top‐Down Fabrication of Large‐Area Graphene Arrays by an In Situ Etching Method

Dechao Geng

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 PR China

University of Chinese Academy of Sciences, Beijing, 10049 PR China

Search for more papers by this author
Huaping Wang

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 PR China

University of Chinese Academy of Sciences, Beijing, 10049 PR China

Search for more papers by this author
Yu Wan

Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, 100084 PR China

Search for more papers by this author
Zhiping Xu

Applied Mechanics Laboratory, Department of Engineering Mechanics and Center for Nano and Micro Mechanics, Tsinghua University, Beijing, 100084 PR China

Search for more papers by this author
Birong Luo

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 PR China

Search for more papers by this author
Jie Xu

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 PR China

University of Chinese Academy of Sciences, Beijing, 10049 PR China

Search for more papers by this author
Gui Yu

Corresponding Author

Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190 PR China

E‐mail: yugui@iccas.ac.cnSearch for more papers by this author
First published: 12 June 2015
Citations: 17

Abstract

Large‐area aligned hexagonal graphene arrays are directly fabricated by an in situ etching method. With precise control over the size, shape, and orientation, the technique allows hydrogen to be employed as an effective etchant on chemical vapor deposited graphene and leads to ordered graphene nanostructures. This direct top‐down approach can enable atomically precise construction of integrated devices from single graphene sheets with a wide range of technological applications.

Number of times cited according to CrossRef: 17

  • Silver Nanoparticles SERS Sensors Using Rapid Thermal CVD Nanoscale Graphene Islands as Templates, IEEE Transactions on Nanotechnology, 10.1109/TNANO.2019.2954490, 19, (25-33), (2020).
  • Substrate Developments for the Chemical Vapor Deposition Synthesis of Graphene, Advanced Materials Interfaces, 10.1002/admi.201902024, 7, 7, (2020).
  • Effect of BN seeds on locating and promoting the initial nucleation of graphene on Cu substrate and its mechanism: A theoretical study, Applied Surface Science, 10.1016/j.apsusc.2020.146469, (146469), (2020).
  • Integrated ionic sieving channels from engineering ordered monolayer two-dimensional crystallite structures, Science Bulletin, 10.1016/j.scib.2020.04.017, (2020).
  • Removal of photoresist residues and healing of defects on graphene using H2 and CH4 plasma, Applied Surface Science, 10.1016/j.apsusc.2018.08.202, 463, (802-808), (2019).
  • Gas Flow-Driven Aligned Growth of Graphene on Liquid Copper, Chemistry of Materials, 10.1021/acs.chemmater.8b03998, (2019).
  • Design of carbon sources: starting point for chemical vapor deposition of graphene, 2D Materials, 10.1088/2053-1583/ab31bd, 6, 4, (042003), (2019).
  • Controllable Growth of Graphene on Liquid Surfaces, Advanced Materials, 10.1002/adma.201800690, 31, 9, (2018).
  • Formation of Micro- and Nano-Trenches on Epitaxial Graphene, Applied Sciences, 10.3390/app8122518, 8, 12, (2518), (2018).
  • Unveiling the competitive role of etching in graphene growth during chemical vapor deposition, 2D Materials, 10.1088/2053-1583/aaf59c, 6, 1, (015031), (2018).
  • Sensitivity enhancement of graphene Hall sensors modified by single-molecule magnets at room temperature, RSC Adv., 10.1039/C6RA27673C, 7, 4, (1776-1781), (2017).
  • Exploring oxygen in graphene chemical vapor deposition synthesis, Nanoscale, 10.1039/C7NR00188F, 9, 11, (3719-3735), (2017).
  • Insight into CO2 Etching Behavior for Efficiently Nanosizing Graphene, Advanced Materials Interfaces, 10.1002/admi.201601065, 4, 10, (2017).
  • Edges fractal approach in graphene – Defects density gain, Carbon, 10.1016/j.carbon.2017.07.077, 123, (395-401), (2017).
  • Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer‐Free Device Fabrication, Advanced Materials, 10.1002/adma.201505123, 28, 25, (4956-4975), (2016).
  • Controlled assembly of SiO x nanoparticles in graphene , Mater. Horiz., 10.1039/C6MH00277C, 3, 6, (568-574), (2016).
  • undefined, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 10.1109/NANO.2016.7751493, (759-762), (2016).

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.