Volume 29, Issue 5 1603644
Communication

Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters

Shigefusa F. Chichibu

Corresponding Author

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2‐1‐1 Katahira, Aoba, Sendai, 980‐8577 Japan

E‐mail: chichibu@tohoku.ac.jpSearch for more papers by this author
Kazunobu Kojima

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2‐1‐1 Katahira, Aoba, Sendai, 980‐8577 Japan

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Akira Uedono

Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1‐1‐1 Tennodai, Tsukuba, 305‐8573 Japan

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Yoshitaka Sato

Futaba Corporation, 1080 Yabutsuka, Chosei‐mura, Chosei‐gun, Chiba, 299‐4395 Japan

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First published: 24 November 2016
Citations: 22

Abstract

Planar vacuum‐fluorescent‐display devices emitting polarized UV‐C, blue, and green light are demonstrated using immiscible Al1−xInxN nanostructures grown in nonpolar m‐directions. Despite the presence of high concentration of nonradiative recombination centers, the Al1−xInxN nanostructures emit polarized light with the luminescence lifetimes of 22–32 ps at 300 K. This defect‐resistant radiative performance suggests supernormal localized characteristics of electron–hole pairs.

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