C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433 China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCenter of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
E-mail address: gqding@mail.sim.ac.cn
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorCorresponding Author
E-mail address: xmxie@mail.sim.ac.cn
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorJiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
Search for more papers by this authorJiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, 3200003 Israel
Search for more papers by this authorCorresponding Author
E-mail address: apannale@suda.edu.cn
Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorCorresponding Author
E-mail address: zhkang@suda.edu.cn
Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433 China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCenter of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
Search for more papers by this authorCorresponding Author
E-mail address: gqding@mail.sim.ac.cn
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorCorresponding Author
E-mail address: xmxie@mail.sim.ac.cn
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorJiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
Search for more papers by this authorJiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, 3200003 Israel
Search for more papers by this authorCorresponding Author
E-mail address: apannale@suda.edu.cn
Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorCorresponding Author
E-mail address: zhkang@suda.edu.cn
Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123 P. R. China
E‐mail: gqding@mail.sim.ac.cn, xmxie@mail.sim.ac.cn, apannale@suda.edu.cn, zhkang@suda.edu.cnSearch for more papers by this authorState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 P. R. China
School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031 P. R. China
Search for more papers by this authorAbstract
Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large‐scale synthesis of C3N, a 2D crystalline, hole‐free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by polymerization of 2,3‐diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h‐symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back‐gated field‐effect transistors made of single‐layer C3N display an on–off current ratio reaching 5.5 × 1010. Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.
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