Laser Frequency Combs: Graphene‐Coupled Terahertz Semiconductor Lasers for Enhanced Passive Frequency Comb Operation (Adv. Sci. 20/2019)
Key Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authori‐Lab, Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Jiangsu, 215123 Suzhou, China
Search for more papers by this authori‐Lab, Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Jiangsu, 215123 Suzhou, China
Search for more papers by this authorSchool of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authorKey Laboratory of Terahertz Solid State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China
Search for more papers by this authori‐Lab, Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Jiangsu, 215123 Suzhou, China
Search for more papers by this authori‐Lab, Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences, 398 Ruoshui Road, Jiangsu, 215123 Suzhou, China
Search for more papers by this authorSchool of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
Search for more papers by this authorState Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, 200062 China
School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093 China
Search for more papers by this authorAbstract
In article number 1900460, Hua Li, Juncheng Cao, Kai Zhang, Heping Zeng, and co‐workers report a graphene‐based approach for enhanced passive frequency comb operation and pulse generation in terahertz semiconductor lasers. The saturable absorption and group velocity dispersion compensation provided by a multi‐layer graphene sample result in a laser frequency comb operation with highly stabilized frequency lines and optical pulse generation (16 ps) in the terahertz regime.
