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Research Article
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High contrast scanning nano‐Raman spectroscopy of silicon

N. Lee

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

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R. D. Hartschuh

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

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D. Mehtani

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

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A. Kisliuk

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

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J. F. Maguire

Materials and Manufacturing Directorate/MLBP, Wright‐Patterson AFB, OH 45433‐7750, USA

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M. Green

Materials Science and Engineering Laboratory, National Institute of Standard and Technology (NIST), Gaithersburg, MD 20899‐8520, USA

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M. D. Foster

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

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A. P. Sokolov

Corresponding Author

E-mail address:alexei@uakron.edu

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA

Department of Polymer Science, University of Akron, Akron, OH 44325‐3909, USA.
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First published: 28 April 2007
Cited by: 67

Abstract

We have demonstrated that scanning nano‐Raman spectroscopy (SNRS), generally known as tip‐enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon‐based structures at the nanoscale. Even though the side illumination optics has disadvantages such as difficulties in optical alignment and shadowing by the tip, it has the critical advantage that it may be used for the analysis of nontransparent samples. A key criterion for making SNRS effective for imaging Si samples is the optimization of the contrast between near‐field and far‐field (background) Raman signals. This has been achieved by optimizing the beam polarization, resulting in an order of magnitude improvement in the contrast. We estimate the lateral resolution of our Raman images to be ∼20 nm. Copyright © 2007 John Wiley & Sons, Ltd.

Number of times cited: 67

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