Full band Monte Carlo study of ballistic effects in nanometer‐scaled strained P channel Double Gate MOSFETs
Abstract
Ballistic transport in a 20 nm long P type Double Gate (DG) MOSFET structure is studied using a Monte Carlo (MC) technique. Hole transport being dominated by the strong anisotropy of the valence dispersion relation, the full bandstructure obtained by a 30 band k ·p calculation is used. The valence bandstructure is shown to be highly anisotropic. The deformation induced by strain is different whether biaxial tensile or compressive strain is applied. This will have an influence on the final density of states (DOS) and scattering rates, closely related to carrier mobility. In the on‐state of the transistor, we demonstrate the out‐of‐equilibrium nature of carrier transport in the entire channel. Microscopic quantities analysis with strain shows the influence of scattering, bandstructure change and ballistic effects on hole transport. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Number of times cited according to CrossRef: 6
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