Communication

Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Nianduan Lu

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Xiaolong Zhao

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Hui Xu

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

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Writam Banerjee

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Hangbing Lv

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Shibing Long

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Qingjiang Li

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

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Qi Liu

Corresponding Author

E-mail address: liuqi@ime.ac.cn

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

E‐mail:

liuqi@ime.ac.cn

liuming@ime.ac.cn

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Ming Liu

Corresponding Author

E-mail address: liuming@ime.ac.cn

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

E‐mail:

liuqi@ime.ac.cn

liuming@ime.ac.cn

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Sen Liu

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Nianduan Lu

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Xiaolong Zhao

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Hui Xu

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

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Writam Banerjee

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Hangbing Lv

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Shibing Long

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

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Qingjiang Li

College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073 China

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Qi Liu

Corresponding Author

E-mail address: liuqi@ime.ac.cn

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

E‐mail:

liuqi@ime.ac.cn

liuming@ime.ac.cn

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Ming Liu

Corresponding Author

E-mail address: liuming@ime.ac.cn

Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China

Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009 China

E‐mail:

liuqi@ime.ac.cn

liuming@ime.ac.cn

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First published: 17 October 2016

https://doi.org/10.1002/adma.201603293

Citations: 97

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Abstract

Negative‐SET behavior is observed in various cation‐based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative‐SET behavior is eliminated by inserting an impermeable graphene layer. The graphene‐based devices show high reliability and satisfying performance.