InGaO₃(ZnO) Superlattice Nanowires for High‐Performance Ultraviolet Photodetectors

Abstract

Superlattice nanowires show promise for nanoelectronic and optoelectronic devices because they can increase the versatility and power of modulating electronic transport, optical properties. In this study, InGaO₃(ZnO) superlattice nanowires via a facile vapor transport technology are successfully synthesized. Then field‐effect transistors and ultraviolet photodetectors are manufactured based on these NWs. The atomic ratios of In:Zn have a great effect on the performance of the as‐fabricated devices. Such a novel superlattice nanowire‐ based individual‐NW devices exhibit excellent sensitivity to ultraviolet light irradiation with a fast response speed of 0.3 s. In addition, the as‐prepared flexible devices fabricated on PET substrates show excellent robustness and mechanical flexibility under various bending curvatures and hundreds of bending cycles. These results indicate that InGaO₃(ZnO) superlattice NWs are promising candidates for future electronic and optoelectronic devices.